Evidence for Alloy Splitting of Ge Related DX State in Al_{x}Ga_{1-x}As

• Authors: C. Skierbiszewski , R. Piotrzkowski , K. Lubke
• Languages of publication: EN

Abstracts

EN

Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C_{3v} configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor.

Keywords

EN

71.55.-i; 72.20.Fr

Discipline

• 72.20.Fr: Low-field transport and mobility; piezoresistance
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 531-533

Dates

published

1998-09

Contributors

author

C. Skierbiszewski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland

author

R. Piotrzkowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland

author

K. Lubke

• Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz, Austria

Identifiers

DOI

10.12693/APhysPolA.94.531