PL EN


Preferences help
enabled [disable] Abstract
Number of results
1998 | 94 | 3 | 531-533
Article title

Evidence for Alloy Splitting of Ge Related DX State in Al_{x}Ga_{1-x}As

Content
Title variants
Languages of publication
EN
Abstracts
EN
Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C_{3v} configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor.
Keywords
EN
Publisher

Year
Volume
94
Issue
3
Pages
531-533
Physical description
Dates
published
1998-09
Contributors
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
author
  • Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz, Austria
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z335kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.