Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C_{3v} configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor.
Discipline
Journal
Year
Volume
Issue
Pages
531-533
Physical description
Dates
published
1998-09
Contributors
author
- High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
author
- High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
author
- Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz, Austria
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z335kz