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1998 | 94 | 3 | 519-525
Article title

CdSe Layers of Below Critical Thickness in ZnSe Matrix: Intrinsic Morphology and Defect Formation

Content
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Languages of publication
EN
Abstracts
EN
Three main stages of the intrinsic morphology transformation of MBE grown CdSe fractional monolayers in ZnSe with increase in their nominal thickness w in the 0.1-3.0 monolayer range were found using both structural and optical characterization techniques. Emergence of the extended (15-30 nm) CdSe-enriched quantum-dot-like pseudomorphic islands at w>0.7 monolayer with the density increasing up to 2.5×10^{10} cm^{-2} at w=2.8 monolayer is clearly displayed in the optical properties of CdSe fractional monolayer nanostructures. The below critical thickness CdSe fractional monolayers having extremely high quantum efficiency can be very perspective as an active region of ZnSe-based blue-green lasers.
Keywords
EN
Publisher

Year
Volume
94
Issue
3
Pages
519-525
Physical description
Dates
published
1998-09
Contributors
author
  • Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
author
  • University of Gothenburg/Chalmers University, 412 96 Gothenburg, Sweden
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z333kz
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