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1998 | 94 | 3 | 503-508
Article title

Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface

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EN
Abstracts
EN
We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si_{0.8}Ge_{0.2} quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n_{s} can be controlled, in the range of (1.5-5.2)×10^{11} cm^{-2}. At a temperature T=0.33 K, the Hall mobility is 4650 cm^{2} V^{-1} s^{-1} at the maximum carrier density. For lower sheet densities (n_{s}<2×10^{11} cm^{-2}) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m_{0} and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n_{s}=(5.2 → 2.5)×10^{11} cm^{-2}. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n_{s}, short range interface charge and interface roughness scattering.
Keywords
EN
Publisher

Year
Volume
94
Issue
3
Pages
503-508
Physical description
Dates
published
1998-09
Contributors
  • Department of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, U.K.
author
  • Department of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, U.K.
author
  • Department of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, U.K.
author
  • Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
author
  • Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
author
  • Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
author
  • Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z330kz
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