High Resistivity AlGaAs Grown by Low Temperature MBE

• Authors: D. Radomska , J. Ratajczak , K. Regiński , M. Bugajski
• Languages of publication: EN

Abstracts

EN

Al_{0.3}Ga_{0.7}As layers were grown by molecular beam epitaxy using substrate temperature 200-300°C, tetrameric As and two values of As/Ga+Al flux ratio i.e. 3 or 8. The post-growth annealing was performed in situ at 600°C for 20 min under As-overpressure. The samples were characterised by reflection high-energy electron diffraction, transmission electron microscope and room-temperature I-V measurements of n^{+}/LT grown layer /n^{+} resistors. The resistivity and trap-filled limited voltage have been determined. The best layers exhibited ρ of the order of 10^{9} Ω cm, were monocrystalline, uniformly precipitated and without dislocations.

Keywords

EN

73.61.Ey

Discipline

• 73.61.Ey: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 492-496

Dates

published

1998-09

Contributors

author

D. Radomska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Ratajczak

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Regiński

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Bugajski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.94.492