PL EN


Preferences help
enabled [disable] Abstract
Number of results
1998 | 94 | 3 | 492-496
Article title

High Resistivity AlGaAs Grown by Low Temperature MBE

Content
Title variants
Languages of publication
EN
Abstracts
EN
Al_{0.3}Ga_{0.7}As layers were grown by molecular beam epitaxy using substrate temperature 200-300°C, tetrameric As and two values of As/Ga+Al flux ratio i.e. 3 or 8. The post-growth annealing was performed in situ at 600°C for 20 min under As-overpressure. The samples were characterised by reflection high-energy electron diffraction, transmission electron microscope and room-temperature I-V measurements of n^{+}/LT grown layer /n^{+} resistors. The resistivity and trap-filled limited voltage have been determined. The best layers exhibited ρ of the order of 10^{9} Ω cm, were monocrystalline, uniformly precipitated and without dislocations.
Keywords
EN
Publisher

Year
Volume
94
Issue
3
Pages
492-496
Physical description
Dates
published
1998-09
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z328kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.