Deep Level Studies in Zn_{1-x}Mg_{x}Se Layers Grown by MBE

• Authors: S. Płachetko , G. Ząbik , Z. Łukasiak , P. Borowski , W. Bała
• Languages of publication: EN

Abstracts

EN

The deep levels present in semiconducting Zn_{1-x}Mg_{x}Se (0 ≤ x ≤ 0.4) were investigated by means of deep level transient spectroscopy, photocapacitance transient and thermally stimulated depolarization. The thermal activation energy levels estimated from the deep level transient spectroscopy measurements are: E_{T1}=0.28 eV and E_{T2}=0.56 eV. For the Zn_{1-x}Mg_{x}Se epilayers thermally stimulated depolarization curves consist of four overlapping peaks: 227.4 K, 243.6 K, 265.7 K, and 285.0 K.

Keywords

EN

71.55.Eq; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 483-486

Dates

published

1998-09

Contributors

author

S. Płachetko

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

G. Ząbik

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

Z. Łukasiak

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

P. Borowski

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

W. Bała

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

Identifiers

DOI

10.12693/APhysPolA.94.483