Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures

• Authors: T. Ochalski , J. Żuk , K. Regiński , M. Bugajski
• Languages of publication: EN

Abstracts

EN

We report on photoreflectance investigations of strained-layer In_{0.2}Ga_{0.8}As/GaAs/Al_{0.3}Ga_{0.7}As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In_{0.2}Ga_{0.8}As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.

Keywords

EN

78.66.Fd; 78.20.-e

Discipline

• 78.66.Fd: III-V semiconductors
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)

• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 463-467

Dates

published

1998-09

Contributors

author

T. Ochalski

• Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

J. Żuk

• Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

K. Regiński

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Bugajski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.94.463