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1998 | 94 | 3 | 463-467
Article title

Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures

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EN
Abstracts
EN
We report on photoreflectance investigations of strained-layer In_{0.2}Ga_{0.8}As/GaAs/Al_{0.3}Ga_{0.7}As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In_{0.2}Ga_{0.8}As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
Keywords
EN
Contributors
author
  • Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
  • Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z322kz
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