Journal
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Abstracts
We report on photoreflectance investigations of strained-layer In_{0.2}Ga_{0.8}As/GaAs/Al_{0.3}Ga_{0.7}As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In_{0.2}Ga_{0.8}As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
Discipline
- 78.66.Fd: III-V semiconductors
- 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
Journal
Year
Volume
Issue
Pages
463-467
Physical description
Dates
published
1998-09
Contributors
author
- Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
- Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z322kz