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1998 | 94 | 3 | 449-453
Article title

Electrical, Magnetic, and Structural Properties of Sn_{1-x}Mn_{x}Te Layers Grown by Molecular Beam Epitaxy

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EN
Abstracts
EN
Layers of Sn_{1-x}Mn_{x}Te (x ≤ 0.1) with thickness 0.2-2 μm were grown by molecular beam epitaxy on BaF_{2} substrates with a 0.01-1 μm thick SnTe buffer layer. Both SnTe and Sn_{1-x}Mn_{x}Te layers show metallic p-type conductivity with conducting hole concentrations (at T=77 K) p_{77}=7×10^{19} -2×10^{21} cm^{-3}. The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at T_{C} ≤ 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 10^{20} cm^{-3}) and remain paramagnetic in the temperature range studied T=4.5÷70 K.
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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bwmeta1.element.bwnjournal-article-appv94z319kz
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