Localized Vibrational Modes of Interstitial Oxygen in Si_{x}Ge_{1-x} Alloys

• Authors: M. Lorenc , J. Humlíček
• Languages of publication: EN

Abstracts

EN

We study infrared-active vibrations of interstitial oxygen in Czochralski-grown samples of Si_{x}Ge_{1-x} alloys with the silicon content from 0 to 1 between room and liquid nitrogen temperature. The measurements were performed on a large series of samples including single crystals of Si and Si-rich alloys, and polycrystalline samples of alloys with a higher Ge content. We focus on quantitative data on the compositional and temperature evolution of the strongest absorption band above 1100 cm^{-1}, related to the asymmetric stretching of the Si_{2}O pseudomolecule. We have also observed a pronounced Fano-like resonance centered at 520 cm^{-1}.

Keywords

EN

78.30.Am; 63.20.Pw

Discipline

• 78.30.Am: Elemental semiconductors and insulators
• 63.20.Pw: Localized modes

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 436-440

Dates

published

1998-09

Contributors

author

M. Lorenc

• Laboratory of Thin Films and Nanostructures, Department of Solid State Physics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37 Brno, Czech Republic

author

J. Humlíček

• Laboratory of Thin Films and Nanostructures, Department of Solid State Physics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37 Brno, Czech Republic

Identifiers

DOI

10.12693/APhysPolA.94.436