Electrical Properties of InGaP Doped with Si

• Authors: E. Litwin-Staszewska , W. Trzeciakowski , R. Piotrzkowski , L. Gonzalez
• Languages of publication: EN

Abstracts

EN

We measured Hall concentration n in InGaP:Si epitaxial layers grown by MBE as a function of pressure P up to 2 GPa and of temperature T from 77 to 300 K. We interpreted our results in terms of the broad distribution of impurity states resonant with the conduction band. From the low-temperature n(P) dependence we can directly obtain the total density of impurity states around the Fermi level ρ(E_{F}). The Fermi level can be shifted with respect to impurity states by applying pressure and by using samples with different n. In this way we obtain ρ(E) in a wide energy range. We discuss the possible reasons for the observed broad distribution of ρ(E).

Keywords

EN

72.20.Fr; 72.80.Ey; 71.55.Eq

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 71.55.Eq: III-V semiconductors
• 72.20.Fr: Low-field transport and mobility; piezoresistance

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 431-435

Dates

published

1998-09

Contributors

author

E. Litwin-Staszewska

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

W. Trzeciakowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

R. Piotrzkowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

L. Gonzalez

• Instituto de Microelectronica de Madrid, CSIC, 28760 Tres Cantos, Spain

Identifiers

DOI

10.12693/APhysPolA.94.431