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1998 | 94 | 3 | 431-435
Article title

Electrical Properties of InGaP Doped with Si

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Languages of publication
EN
Abstracts
EN
We measured Hall concentration n in InGaP:Si epitaxial layers grown by MBE as a function of pressure P up to 2 GPa and of temperature T from 77 to 300 K. We interpreted our results in terms of the broad distribution of impurity states resonant with the conduction band. From the low-temperature n(P) dependence we can directly obtain the total density of impurity states around the Fermi level ρ(E_{F}). The Fermi level can be shifted with respect to impurity states by applying pressure and by using samples with different n. In this way we obtain ρ(E) in a wide energy range. We discuss the possible reasons for the observed broad distribution of ρ(E).
Keywords
EN
Publisher

Year
Volume
94
Issue
3
Pages
431-435
Physical description
Dates
published
1998-09
Contributors
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • Instituto de Microelectronica de Madrid, CSIC, 28760 Tres Cantos, Spain
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z315kz
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