Polarity Related Problems in Growth of GaN Homoepitaxial Layers

• Authors: M. Leszczyński , P. Prystawko , A. Śliwinski , T. Suski , E. Litwin-Staszewska , S. Porowski , R. Paszkiewicz , M. Tłaczała , B. Beaumont , P. Gibart , A. Barski , R. Langer , W. Knap , E. Frayssinet
• Languages of publication: EN

Abstracts

EN

Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.

Keywords

EN

61.72.Vv; 65.70.+y

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 427-430

Dates

published

1998-09

Contributors

author

M. Leszczyński

• High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland

author

P. Prystawko

• High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland

author

A. Śliwinski

• High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland

author

T. Suski

• High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland

author

E. Litwin-Staszewska

• High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland

author

S. Porowski

• High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland

author

R. Paszkiewicz

• Institute of Electronics Technology, Wrocław Technical University, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

M. Tłaczała

• Institute of Electronics Technology, Wrocław Technical University, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

B. Beaumont

• CRHEA-CNRS, Sophia Antipolis, 06960-Valbonne, France

author

P. Gibart

• CRHEA-CNRS, Sophia Antipolis, 06960-Valbonne, France

author

A. Barski

• Commissariat à l'Energie Atomique/Departement de Recherche Fondamentale sur la Matière Condensée, 38054 Grenoble, Cedex, France

author

R. Langer

• Commissariat à l'Energie Atomique/Departement de Recherche Fondamentale sur la Matière Condensée, 38054 Grenoble, Cedex, France

author

W. Knap

• Université de Montpellier II, Groupe d'Etudes des Semiconducteurs, Place E. Bataillon, 34095 Montpellier, France

author

E. Frayssinet

• Université de Montpellier II, Groupe d'Etudes des Semiconducteurs, Place E. Bataillon, 34095 Montpellier, France

Identifiers

DOI

10.12693/APhysPolA.94.427