PL EN


Preferences help
enabled [disable] Abstract
Number of results
1998 | 94 | 3 | 427-430
Article title

Polarity Related Problems in Growth of GaN Homoepitaxial Layers

Content
Title variants
Languages of publication
EN
Abstracts
EN
Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.
Keywords
EN
Publisher

Year
Volume
94
Issue
3
Pages
427-430
Physical description
Dates
published
1998-09
Contributors
  • High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland
  • High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland
  • Institute of Electronics Technology, Wrocław Technical University, Janiszewskiego 11/17, 50-372 Wrocław, Poland
author
  • Institute of Electronics Technology, Wrocław Technical University, Janiszewskiego 11/17, 50-372 Wrocław, Poland
author
  • CRHEA-CNRS, Sophia Antipolis, 06960-Valbonne, France
author
  • CRHEA-CNRS, Sophia Antipolis, 06960-Valbonne, France
author
  • Commissariat à l'Energie Atomique/Departement de Recherche Fondamentale sur la Matière Condensée, 38054 Grenoble, Cedex, France
author
  • Commissariat à l'Energie Atomique/Departement de Recherche Fondamentale sur la Matière Condensée, 38054 Grenoble, Cedex, France
author
  • Université de Montpellier II, Groupe d'Etudes des Semiconducteurs, Place E. Bataillon, 34095 Montpellier, France
author
  • Université de Montpellier II, Groupe d'Etudes des Semiconducteurs, Place E. Bataillon, 34095 Montpellier, France
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z314kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.