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1998 | 94 | 3 | 415-420
Article title

Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

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EN
Abstracts
EN
The energy relaxation in two-dimensional electron gas in In_{0.53}Ga_{0.47}As/InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h_{14}=(1.1±0.1)×10^{7} V/cm. Available data for the piezoelectric constant of In_{x}Ga_{1-x}As are discussed in the light of the results of this work.
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Contributors
author
  • Ioffe Physico-Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
author
  • Ioffe Physico-Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
author
  • Ioffe Physico-Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
  • Ioffe Physico-Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
author
  • Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary
author
  • CNRS Centre de Recherche sur les Très Basses Températures and CNRS/Max-Planck-Institute High Magnetic Field Laboratory, Grenoble, France
author
  • Applied Physics Research Group, Department of General Physics, Eötvös Loránd University, Budapest, Hungary
References
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bwmeta1.element.bwnjournal-article-appv94z312kz
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