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1998 | 94 | 3 | 392-396
Article title

Bound Exciton Luminescence in Phosphorus Doped Cd_{1-x}Mn_{x}Te Crystals

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EN
Abstracts
EN
Measurement of photoluminescence as a function of temperature and of magnetic field in p-type phosphorus doped Cd_{1-x}Mn_{x}Te is reported. From the conduction band-acceptor level transition, the ionization energy of P-acceptors is obtained to be 54ą1 meV. The photoluminescence spectrum in the band edge region exhibits three maxima connected with the recombination of excitons bound to neutral acceptors (A^{0}, X), excitons bound to neutral donors (D^{0},X), and free excitons (X) at energies E_{(A^{0},X)}=1.606, E_{(D^{0},X)}=1.610, and E_{X}=1.614 eV, respectively. At T=1.4 K a strong increase in PL intensity of (A^{0}, X) line 8-fold as a function of magnetic field is found and shown to originate from the magnetic field-induced lowering of the acceptor binding energy and increase in the hole effective volume.
Keywords
EN
Publisher

Year
Volume
94
Issue
3
Pages
392-396
Physical description
Dates
published
1998-09
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z307kz
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