Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN

• Authors: E. Kamińska , A. Piotrowska , J. Jasiński , J. Kozubowski , A. Barcz , K. Gołaszewska , M. Bremser , R. Davis
• Languages of publication: EN

Abstracts

EN

The microstructure of Ni/Si-based contacts to GaN has been studied using transmission electron microscopy methods. The transition from non-ohmic to ohmic behavior appears to correlate with the initial limited reaction of GaN with Ni and further Si-Ni reaction-driven decomposition of the interfacial GaN-Ni phase.

Keywords

EN

73.40.Cg; 73.40.Ns

Discipline

• 73.40.Cg: Contact resistance, contact potential
• 73.40.Ns: Metal-nonmetal contacts

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 383-386

Dates

published

1998-09

Contributors

author

E. Kamińska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Jasiński

• Institute of Experimental Physics, Warsaw University, Warsaw, Poland

author

J. Kozubowski

• Faculty of Mat. Science and Engineering, Warsaw Technical University, Warsaw, Poland

author

A. Barcz

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Gołaszewska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Bremser

• Aixtron AG, Aachen, Germany

author

R. Davis

• Department of Mat. Science and Eng., North Carolina State University, Raleigh, USA

Identifiers

DOI

10.12693/APhysPolA.94.383