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1998 | 94 | 3 | 383-386
Article title

Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN

Content
Title variants
Languages of publication
EN
Abstracts
EN
The microstructure of Ni/Si-based contacts to GaN has been studied using transmission electron microscopy methods. The transition from non-ohmic to ohmic behavior appears to correlate with the initial limited reaction of GaN with Ni and further Si-Ni reaction-driven decomposition of the interfacial GaN-Ni phase.
Keywords
EN
Publisher

Year
Volume
94
Issue
3
Pages
383-386
Physical description
Dates
published
1998-09
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
  • Faculty of Mat. Science and Engineering, Warsaw Technical University, Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Aixtron AG, Aachen, Germany
author
  • Department of Mat. Science and Eng., North Carolina State University, Raleigh, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z305kz
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