Investigation of Quantum Dot Structures Grown by MOCVD in InAs/GaAs System

• Authors: J. Jasiński , R. Bożek , R. Stępniewski , J. Kozubowski
• Languages of publication: EN

Abstracts

EN

Layers of InAs quantum dots grown on [100] GaAs substrates were characterised by photoluminescence and investigated by transmission electron microscopy. Two types of InAs islands were observed in these layers. The islands of the first type had mainly a form of big, elongated pyramids. Most of them were found to be dislocated. On the other hand, the islands of the second type were real self-assembled, coherent quantum dots giving rise to a characteristic photoluminescence band.

Keywords

EN

68.55.-a; 61.16.Bg

Discipline

• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 369-373

Dates

published

1998-09

Contributors

author

J. Jasiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

R. Bożek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

R. Stępniewski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Kozubowski

• Faculty of Materials Science and Engineering, Warsaw University of Technology, Narbutta 85, 02-524 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.94.369