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1998 | 94 | 3 | 369-373
Article title

Investigation of Quantum Dot Structures Grown by MOCVD in InAs/GaAs System

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EN
Abstracts
EN
Layers of InAs quantum dots grown on [100] GaAs substrates were characterised by photoluminescence and investigated by transmission electron microscopy. Two types of InAs islands were observed in these layers. The islands of the first type had mainly a form of big, elongated pyramids. Most of them were found to be dislocated. On the other hand, the islands of the second type were real self-assembled, coherent quantum dots giving rise to a characteristic photoluminescence band.
Keywords
EN
Publisher

Year
Volume
94
Issue
3
Pages
369-373
Physical description
Dates
published
1998-09
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Faculty of Materials Science and Engineering, Warsaw University of Technology, Narbutta 85, 02-524 Warsaw, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z302kz
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