Reflectivity Studies of Lattice Vibrations and Free Electrons in MBE Grown GaN Epitaxial Layers

• Authors: A. Iller , W. Jantsch , J. Marks , B. Pastuszka , R. Diduszko
• Languages of publication: EN

Abstracts

EN

We have observed a sharp structure with a peak at the frequency of the E_{1}-TO phonon in the reflectivity of GaN epitaxial layers grown by molecular beam epitaxy on Si substrates. The simulations of the reflection performed show that the observed shape can be explained by assuming both collective lattice vibrations and free carriers contributions to the dielectric function. We assumed the Lorentz oscillator to describe the contribution of the collective lattice vibrations and the Drude-Lorentz model for that of free carriers. Fitting the calculated reflectivity to the spectrum obtained experimentally allowed us to evaluate lattice and free carrier parameters.

Keywords

EN

63.20.-e; 78.66.Fd

Discipline

• 78.66.Fd: III-V semiconductors
• 63.20.-e: Phonons in crystal lattices(for phonons in superconductors, see 74.25.Kc; see also 43.35.Gk Phonons in crystal lattice, quantum acoustics—in Acoustics Appendix)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 2
• Pages: 336-340

Dates

published

1998-08

Contributors

author

A. Iller

• Institute of Vacuum Technology, Długa 44/50, 00-241 Warszawa, Poland

author

W. Jantsch

• Institut für Experimentalphysik, Johannes Kepler Universität, Altenbergerstr. 69, 4040 Linz, Austria

author

J. Marks

• Institute of Vacuum Technology, Długa 44/50, 00-241 Warszawa, Poland

author

B. Pastuszka

• Institute of Vacuum Technology, Długa 44/50, 00-241 Warszawa, Poland

author

R. Diduszko

• Institute of Vacuum Technology, Długa 44/50, 00-241 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.94.336