Morphology and Optical Properties of Laser-Assisted Chemical Vapour Deposited GaN

• Authors: E. Goldys , M. Godlewski , T. Tansley
• Languages of publication: EN

Abstracts

EN

Properties of GaN epilayers grown by laser-assisted chemical vapour deposition are discussed. Good crystallinity and surface morphology of the films is demonstrated. Micro-Raman spectra are explained by scattering by small, randomly oriented cubic phase units present in the GaN film.

Keywords

EN

68.55.-a; 81.15.Gh; 61.16.Ch; 78.30.-j

Discipline

• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 2
• Pages: 331-335

Dates

published

1998-08

Contributors

author

E. Goldys

• Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, 2109 NSW, Australia

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Tansley

• Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, 2109 NSW, Australia

Identifiers

DOI

10.12693/APhysPolA.94.331