Lattice Sitting of Platinum Atoms in Diluted SiGe Alloys

• Authors: L. Dobaczewski , K. Bonde Nielsen , A. Nylandsted Larsen , J. Lundsgaard Hansen , K. Gościński , A. Peaker
• Languages of publication: EN

Abstracts

EN

In this report we present high-resolution spectra obtained with a use of the Laplace transform deep level transient spectroscopy for platinum diffused into dilute (0-5% of Ge) SiGe alloys. Very significant changes are observed in the spectra associated with the transition metals as the germanium content is altered. We interpret these spectra in terms of the configurations of silicon and germanium atoms surrounding the transition metal. In order to explain the observed behaviour both the first and second nearest neighbour shells are considered.

Keywords

EN

68.55.Ln; 71.55.Cn; 73.40.Lq

Discipline

• 71.55.Cn: Elemental semiconductors
• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 2
• Pages: 297-299

Dates

published

1998-08

Contributors

author

L. Dobaczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Bonde Nielsen

• Faculty of Physics and Astronomy, University of Aarhus, Aarhus, Denmark

author

A. Nylandsted Larsen

• Faculty of Physics and Astronomy, University of Aarhus, Aarhus, Denmark

author

J. Lundsgaard Hansen

• Faculty of Physics and Astronomy, University of Aarhus, Aarhus, Denmark

author

K. Gościński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Peaker

• Centre for Electronic Materials, University of Manchester, Institute of Science and Technology, Manchester, U.K.

Identifiers

DOI

10.12693/APhysPolA.94.297