Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells

• Authors: M. Bugajski , M. Godlewski , K. Regiński , P. Holtz , J. Bergman , B. Monemar
• Languages of publication: EN

Abstracts

EN

We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.

Keywords

EN

42.55.Px; 73.20.Dx

Discipline

• 42.55.Px: Semiconductor lasers; laser diodes

• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 2
• Pages: 265-270

Dates

published

1998-08

Contributors

author

M. Bugajski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Regiński

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Holtz

• Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

author

J. Bergman

• Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

author

B. Monemar

• Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

Identifiers

DOI

10.12693/APhysPolA.94.265