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1998 | 94 | 2 | 265-270
Article title

Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells

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Languages of publication
EN
Abstracts
EN
We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.
Keywords
EN
Publisher

Year
Volume
94
Issue
2
Pages
265-270
Physical description
Dates
published
1998-08
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z219kz
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