Role of Ionic Processes in Degradation of Wide-Gap II-VI Semiconductor Materials

• Authors: L. Borkovskaya , B. Dzhymaev , N. Korsunskaya , I. Markevich , A. Singaevsky , M. Sheinkman
• Languages of publication: EN

Abstracts

EN

A role of mobile defects in processes responsible for II-VI compound semiconductor characteristic instability is under consideration. These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular, shallow donor creation in CdS crystals. Accumulation of mobile defects near dislocations results in some specific effects: anisotropy of conductivity induced by electric field and distortion of edge emission spectrum shape. These effects side by side with electron-enhanced defect reactions have been found to influence considerably semiconductor device characteristics.

Keywords

EN

71.55.Jv; 78.55.Et

Discipline

• 78.55.Et: II-VI semiconductors
• 71.55.Jv: Disordered structures; amorphous and glassy solids

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 2
• Pages: 255-259

Dates

published

1998-08

Contributors

author

L. Borkovskaya

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine

author

B. Dzhymaev

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine

author

N. Korsunskaya

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine

author

I. Markevich

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine

author

A. Singaevsky

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine

author

M. Sheinkman

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine

Identifiers

DOI

10.12693/APhysPolA.94.255