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1998 | 94 | 2 | 255-259
Article title

Role of Ionic Processes in Degradation of Wide-Gap II-VI Semiconductor Materials

Content
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EN
Abstracts
EN
A role of mobile defects in processes responsible for II-VI compound semiconductor characteristic instability is under consideration. These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular, shallow donor creation in CdS crystals. Accumulation of mobile defects near dislocations results in some specific effects: anisotropy of conductivity induced by electric field and distortion of edge emission spectrum shape. These effects side by side with electron-enhanced defect reactions have been found to influence considerably semiconductor device characteristics.
Keywords
EN
Publisher

Year
Volume
94
Issue
2
Pages
255-259
Physical description
Dates
published
1998-08
Contributors
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z217kz
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