Capacitance Spectroscopy of Single-Barrier GaAs/AlAs/GaAS Structures Containing InAs Quantum Dots

• Authors: A. Belyaev , L. Eaves , P. Main , A. Polimeni , S. Stoddart , M. Henini
• Languages of publication: EN

Abstracts

EN

An electrostatic profile of single-barrier heterostructures with InAs quantum dots encased into barrier has been studied. The role of growth conditions and structure's design is investigated. The charging state and position of energy levels for InAs quantum dots embedded in AlAs matrix are discussed.

Keywords

EN

73.40.Gk; 85.30.Mn

Discipline

• 85.30.Mn: Junction breakdown and tunneling devices (including resonance tunneling devices)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 2
• Pages: 245-249

Dates

published

1998-08

Contributors

author

A. Belyaev

• Institute of Semiconductor Physics, NASD, Kiev 252028, Ukraine

author

L. Eaves

• Department of Physics, University of Nottingham, Nottingham, NG7 2RD, U.K.

author

P. Main

• Department of Physics, University of Nottingham, Nottingham, NG7 2RD, U.K.

author

A. Polimeni

• Department of Physics, University of Nottingham, Nottingham, NG7 2RD, U.K.

author

S. Stoddart

• Department of Physics, University of Nottingham, Nottingham, NG7 2RD, U.K.

author

M. Henini

• Department of Physics, University of Nottingham, Nottingham, NG7 2RD, U.K.

Identifiers

DOI

10.12693/APhysPolA.94.245