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1998 | 94 | 2 | 245-249
Article title

Capacitance Spectroscopy of Single-Barrier GaAs/AlAs/GaAS Structures Containing InAs Quantum Dots

Content
Title variants
Languages of publication
EN
Abstracts
EN
An electrostatic profile of single-barrier heterostructures with InAs quantum dots encased into barrier has been studied. The role of growth conditions and structure's design is investigated. The charging state and position of energy levels for InAs quantum dots embedded in AlAs matrix are discussed.
Keywords
EN
Year
Volume
94
Issue
2
Pages
245-249
Physical description
Dates
published
1998-08
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z215kz
Identifiers
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