Anomalous Magnetoresistance in Multi-Level Quantum Wells

• Authors: N. Averkiev , L. Golub , G. Pikus
• Languages of publication: EN

Abstracts

EN

Effect of intensive interlevel transitions in quantum well and strong spin-orbit interaction on weak localization is considered. Anomalous magnetoresistance in classically weak fields is calculated for p-type quantum wells based on A_{3}B_{5} semiconductors. It is shown that the sign of magnetoresistance changes with varying doping level and the role of the intersubband transitions in weak localization effects depends dramatically on a view of the scattering potential.

Keywords

EN

71.55.Eq; 71.70.Ej; 73.20.Fz

Discipline

• 71.55.Eq: III-V semiconductors
• 71.70.Ej: Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
• 73.20.Fz: Weak or Anderson localization

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 2
• Pages: 229-234

Dates

published

1998-08

Contributors

author

N. Averkiev

• A.F. Ioffe Physico-Technical Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia

author

L. Golub

• A.F. Ioffe Physico-Technical Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia

author

G. Pikus

• A.F. Ioffe Physico-Technical Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia

Identifiers

DOI

10.12693/APhysPolA.94.229