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1998 | 94 | 2 | 229-234
Article title

Anomalous Magnetoresistance in Multi-Level Quantum Wells

Content
Title variants
Languages of publication
EN
Abstracts
EN
Effect of intensive interlevel transitions in quantum well and strong spin-orbit interaction on weak localization is considered. Anomalous magnetoresistance in classically weak fields is calculated for p-type quantum wells based on A_{3}B_{5} semiconductors. It is shown that the sign of magnetoresistance changes with varying doping level and the role of the intersubband transitions in weak localization effects depends dramatically on a view of the scattering potential.
Keywords
EN
Year
Volume
94
Issue
2
Pages
229-234
Physical description
Dates
published
1998-08
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z212kz
Identifiers
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