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1998 | 94 | 2 | 229-234
Article title

Anomalous Magnetoresistance in Multi-Level Quantum Wells

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EN
Abstracts
EN
Effect of intensive interlevel transitions in quantum well and strong spin-orbit interaction on weak localization is considered. Anomalous magnetoresistance in classically weak fields is calculated for p-type quantum wells based on A_{3}B_{5} semiconductors. It is shown that the sign of magnetoresistance changes with varying doping level and the role of the intersubband transitions in weak localization effects depends dramatically on a view of the scattering potential.
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Contributors
author
  • A.F. Ioffe Physico-Technical Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia
author
  • A.F. Ioffe Physico-Technical Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia
author
  • A.F. Ioffe Physico-Technical Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia
References
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv94z212kz
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