Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

• Authors: Z. Zytkiewicz
• Languages of publication: EN

Abstracts

EN

Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case of GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metallorganic vapour phase epitaxy will be underlined.

Keywords

EN

68.55.Ln; 81.15.Lm; 68.60.Bs; 61.72.Ff

Discipline

• 68.60.Bs: Mechanical and acoustical properties
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)
• 81.15.Lm: Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 2
• Pages: 219-227

Dates

published

1998-08

Contributors

author

Z. Zytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.94.219