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1998 | 94 | 2 | 219-227
Article title

Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

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Content
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Languages of publication
EN
Abstracts
EN
Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case of GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metallorganic vapour phase epitaxy will be underlined.
Keywords
Year
Volume
94
Issue
2
Pages
219-227
Physical description
Dates
published
1998-08
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z211kz
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