Magnetotransport and Magnetic Properties of (Ga,Mn)As and its Heterostructures

• Authors: H. Ohno
• Languages of publication: EN

Abstracts

EN

Introduction of high density of Mn in GaAs by low temperature molecular beam epitaxy results in a homogeneous diluted magnetic semiconductor (Ga,Mn)As, which exhibits ferromagnetism at low temperatures. Temperature and magnetic field dependence of magnetotransport and magnetization of (Ga,Mn)As films revealed the Curie temperature T_{C} which can be as high as 110 K and the p-d exchange, which explains T_{C} in the framework of the RKKY interaction. Multilayer heterostructures such as all-semiconductor ferromagnet/nonmagnet/ferromagnet trilayer structures and resonant tunneling diodes have been fabricated and studied. These heterostructure results show the potential of the present material system for exploring new physics and for developing new functionality toward future electronic and optical devices.

Keywords

EN

73.61.Ey; 75.50.Pp; 75.70.Cn

Discipline

• 75.70.Cn: Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
• 73.61.Ey: III-V semiconductors
• 75.50.Pp: Magnetic semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 2
• Pages: 155-164

Dates

published

1998-08

Contributors

author

H. Ohno

• Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan

Identifiers

DOI

10.12693/APhysPolA.94.155