Tunneling Magnetoresistance in Ferromagnetic Junctions: Bias Dependence

• Authors: J. Barnaś , S. Lee , P. Holody , L. Schelp , F. Petroff , A. Fert
• Languages of publication: EN

Abstracts

EN

Electron tunneling between two ferromagnetic electrodes across an insulating barrier is analysed theoretically and experimentally. The barrier is either uniform or it includes a layer of small magnetic metallic particles. Particular attention is paid to the origin of the tunneling magnetoresistance and its bias dependence, as well as to the effects due to Coulomb blockade.

Keywords

EN

73.40.Gk; 73.40.Rw; 75.70.-i

Discipline

• 75.70.-i: Magnetic properties of thin films, surfaces, and interfaces(for magnetic properties of nanostructures, see 75.75.-c)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 73.40.Rw: Metal-insulator-metal structures

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 93
• Issue: 2
• Pages: 387-391

Dates

published

1998-02

Contributors

author

J. Barnaś

• Unite Mixte de Physique CNRS/Thomson, Domaine de Corbeville, 91 404 Orsay, France

author

S. Lee

• Unite Mixte de Physique CNRS/Thomson, Domaine de Corbeville, 91 404 Orsay, France

author

P. Holody

• Unite Mixte de Physique CNRS/Thomson, Domaine de Corbeville, 91 404 Orsay, France

author

L. Schelp

• Unite Mixte de Physique CNRS/Thomson, Domaine de Corbeville, 91 404 Orsay, France

author

F. Petroff

• Unite Mixte de Physique CNRS/Thomson, Domaine de Corbeville, 91 404 Orsay, France

author

A. Fert

• Unite Mixte de Physique CNRS/Thomson, Domaine de Corbeville, 91 404 Orsay, France

Identifiers

DOI

10.12693/APhysPolA.93.387