Some Applications of Ballistic Electron Emission Microscopy/Spectroscopy

• Authors: J. Walachová
• Languages of publication: EN

Abstracts

EN

A brief review of ballistic electron emission microscopy and spectroscopy applications is presented. Results of our ballistic electron emission spectroscopy measurements on cleaved n-GaAs are given. The threshold in ballistic current-voltage characteristic is observed at bias 1.93 V which is high above the expected threshold. Explanation of this effect is given in the frame of present theoretical results.

Keywords

EN

73.20.Dx; 73.30.+y; 73.20.At

Discipline

• 73.20.At: Surface states, band structure, electron density of states
• 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 93
• Issue: 2
• Pages: 365-372

Dates

published

1998-02

Contributors

author

J. Walachová

• Institute of Radio Engineering and Electronics, Chaberská 57, 182 51 Praha 8, Czech Republic

Identifiers

DOI

10.12693/APhysPolA.93.365