Applications of Scanning Tunneling Microscopy To Solid State Physics

• Authors: H. van Kempen , E. Boon , M. van der Wielen , J. Wildöer , M. Prins , R. Jansen , R. Schad
• Languages of publication: EN

Abstracts

EN

Due to the dependence of the tunnel current to material properties like work function, density of states, and spin polarization the scanning tunneling microscope can be used to study a number of solid state physics problems. This will be illustrated with some examples. The presented examples have in common that also the role of the tip properties have to be taken explicitly into account.

Keywords

EN

61.16.Ch; 68.35.Dv; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors
• 68.35.Dv: Composition, segregation; defects and impurities

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 93
• Issue: 2
• Pages: 323-331

Dates

published

1998-02

Contributors

author

H. van Kempen

• Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands

author

E. Boon

• Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands

author

M. van der Wielen

• Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands

author

J. Wildöer

• Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands

author

M. Prins

• Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands

author

R. Jansen

• Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands

author

R. Schad

• Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands

Identifiers

DOI

10.12693/APhysPolA.93.323