Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy

• Authors: Z.R. Żytkiewicz , J. Domagała , J. Bąk-Misiuk , D. Dobosz , M. Leszczyński
• Languages of publication: EN

Abstracts

EN

Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.

Keywords

EN

68.60.Bs; 68.55.Ln

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 1092-1096

Dates

published

1997-11

Contributors

author

Z.R. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Bąk-Misiuk

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

D. Dobosz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Leszczyński

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland.