Journal
Article title
Title variants
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Abstracts
We report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decrease in the photoluminescence intensity of the GaAs surface treated by (NH_{4})_{2}S_{x} solution. The results are discussed in terms of a photoinduced process of the As_{Ga} antisite generation on the sulfurized surface of GaAs.
Journal
Year
Volume
Issue
Pages
1083-1086
Physical description
Dates
published
1997-11
Contributors
author
- Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
author
- Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z553kz