PL EN


Preferences help
enabled [disable] Abstract
Number of results
1997 | 92 | 5 | 1083-1086
Article title

Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
We report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decrease in the photoluminescence intensity of the GaAs surface treated by (NH_{4})_{2}S_{x} solution. The results are discussed in terms of a photoinduced process of the As_{Ga} antisite generation on the sulfurized surface of GaAs.
Keywords
EN
Publisher

Year
Volume
92
Issue
5
Pages
1083-1086
Physical description
Dates
published
1997-11
Contributors
  • Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
author
  • Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z553kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.