Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs

• Authors: Z. Żytkiewicz , L. Dobaczewski , D. Gomez , F. Briones
• Languages of publication: EN

Abstracts

EN

We report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decrease in the photoluminescence intensity of the GaAs surface treated by (NH_{4})_{2}S_{x} solution. The results are discussed in terms of a photoinduced process of the As_{Ga} antisite generation on the sulfurized surface of GaAs.

Keywords

EN

68.35.Dv; 68.45.Da

Discipline

• 68.35.Dv: Composition, segregation; defects and impurities

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 1083-1086

Dates

published

1997-11

Contributors

author

Z. Żytkiewicz

• Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

L. Dobaczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

D. Gomez

• Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain

author

F. Briones

• Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain

Identifiers

DOI

10.12693/APhysPolA.92.1083