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1997 | 92 | 5 | 1079-1082
Article title

Substrate Defects Filtration During Epitaxial Lateral Overgrowth of GaAs

Content
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Languages of publication
EN
Abstracts
EN
Results on the growth of GaAs on (001) GaAs substrates by the epitaxial lateral overgrowth technique are reported. We show that the ratio of normal to lateral growth rates in the epitaxial lateral overgrowth process can be controlled by the crystallographic orientation of the seeds and by Si adding to the melt. Experimental data showing that the dislocations threading from the substrate are efficiently filtered and cannot propagate to the epitaxial lateral overgrowth layers are presented. These findings prove that the epitaxial lateral overgrowth process is the powerful method to grow epilayers with low dislocation density on high dislocation density substrates.
Keywords
EN
Publisher

Year
Volume
92
Issue
5
Pages
1079-1082
Physical description
Dates
published
1997-11
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z552kz
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