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1997 | 92 | 5 | 1059-1062
Article title

Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers

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EN
Abstracts
EN
In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×10^{17} cm^{-3} and mobility 16 cm^{2}/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.
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EN
Publisher

Year
Volume
92
Issue
5
Pages
1059-1062
Physical description
Dates
published
1997-11
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • High Pressure Research Centre, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Centre, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z547kz
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