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1997 | 92 | 5 | 1033-1037
Article title

Phonon Deformation Potentials from Raman Measurements on Semiconductor Membranes

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Languages of publication
EN
Abstracts
EN
It is shown that the phonon deformation potentials in semiconductors can be determined by Raman scattering on hydrostatically and biaxially deformed samples. The complete data includes biaxial deformation in the (100), (111), and (110) planes. Biaxial strain is applied to the sample using the recently developed membrane method. The phonon displacement under biaxial strain can be directly obtained from Raman measurements on a single membrane provided we determine the strain from the splitting of the band gap using e.g. the photoreflectance technique. Alternatively, the ratios of different phonon shifts can supply the necessary information. The method is illustrated with experimental results for GaP.
Keywords
EN
Publisher

Year
Volume
92
Issue
5
Pages
1033-1037
Physical description
Dates
published
1997-11
Contributors
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
  • Departamento de Fisica Aplicada, Universidad de Valencia, 46100 Burjassot (Valencia), Spain
  • Departamento de Fisica Aplicada, Universidad de Valencia, 46100 Burjassot (Valencia), Spain
  • Departamento de Fisica Aplicada, Universidad de Valencia, 46100 Burjassot (Valencia), Spain
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z541kz
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