Phonon Deformation Potentials from Raman Measurements on Semiconductor Membranes

• Authors: W. Trzeciakowski , J. Martinez-Pastor , G. Martinez-Criado
• Languages of publication: EN

Abstracts

EN

It is shown that the phonon deformation potentials in semiconductors can be determined by Raman scattering on hydrostatically and biaxially deformed samples. The complete data includes biaxial deformation in the (100), (111), and (110) planes. Biaxial strain is applied to the sample using the recently developed membrane method. The phonon displacement under biaxial strain can be directly obtained from Raman measurements on a single membrane provided we determine the strain from the splitting of the band gap using e.g. the photoreflectance technique. Alternatively, the ratios of different phonon shifts can supply the necessary information. The method is illustrated with experimental results for GaP.

Keywords

EN

78.30.Fs; 78.20.Hp; 63.20.Ry

Discipline

• 63.20.Ry: Anharmonic lattice modes
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 1033-1037

Dates

published

1997-11

Contributors

author

W. Trzeciakowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
• Departamento de Fisica Aplicada, Universidad de Valencia, 46100 Burjassot (Valencia), Spain

author

J. Martinez-Pastor

• Departamento de Fisica Aplicada, Universidad de Valencia, 46100 Burjassot (Valencia), Spain

author

G. Martinez-Criado

• Departamento de Fisica Aplicada, Universidad de Valencia, 46100 Burjassot (Valencia), Spain

Identifiers

DOI

10.12693/APhysPolA.92.1033