Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition

• Authors: B. Suchanek , M. Palczewska , K. Pakuła , J. Baranowski , M. Kamińska
• Languages of publication: EN

Abstracts

EN

Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10^{17} cm^{-1} and mobility up to 500 cm^{2}/(V s) were achieved whereas hole concentration up to 7×10^{17} cm^{-3} and mobility about 16 cm^{2}/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g_{⊥}=1.9487 and g_{∥}=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.

Keywords

EN

72.80.Ey; 73.61.Ey

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 1001-1004

Dates

published

1997-11

Contributors

author

B. Suchanek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Palczewska

• Institute of Technology of Electronic Materials, Wólczyńska 133, 01-919 Warsaw, Poland

author

K. Pakuła

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland