Study of DI-Hydrogen-Monovacancy Defect in Silicon

• Authors: P. Stallinga , B.B. Nielsen
• Languages of publication: EN

Abstracts

EN

A careful analysis of the alleged electron paramagnetic resonance spectrum of VH_{2} in silicon is made. The parameters of this spectrum coincide with those of the well-known excited state (S=1) spectrum of the oxygen vacancy defect. The conclusion is reached that they are one and the same.

Keywords

EN

76.30.Lh; 76.70.Hb; 76.30.-v

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 989-992

Dates

published

1997-11

Contributors

author

P. Stallinga

• Institut for Fysik og Astronomi, Århus University Ny Munkegade, bygning 520, 8000 Århus-C, Denmark

author

B.B. Nielsen

• Institut for Fysik og Astronomi, Århus University Ny Munkegade, bygning 520, 8000 Århus-C, Denmark