Study of DI-Hydrogen-Monovacancy Defect in Silicon

Stallinga, P.; Nielsen, B.B.

Journal

Acta Physica Polonica A

1997 | 92 | 5 | 989-992

Article title

Study of DI-Hydrogen-Monovacancy Defect in Silicon

Authors

P. Stallinga , B.B. Nielsen

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/92/a092z5p30.pdf [remote]

Title variants

Languages of publication

EN

Abstracts

EN

A careful analysis of the alleged electron paramagnetic resonance spectrum of VH_{2} in silicon is made. The parameters of this spectrum coincide with those of the well-known excited state (S=1) spectrum of the oxygen vacancy defect. The conclusion is reached that they are one and the same.

Keywords

EN

76.30.Lh 76.70.Hb 76.30.-v

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1997

Volume

92

Issue

5

Pages

989-992

Physical description

Dates

published

1997-11

Contributors

author

P. Stallinga

Institut for Fysik og Astronomi, Århus University Ny Munkegade, bygning 520, 8000 Århus-C, Denmark

author

B.B. Nielsen

Institut for Fysik og Astronomi, Århus University Ny Munkegade, bygning 520, 8000 Århus-C, Denmark

Journal

Acta Physica Polonica A

Article title

Study of DI-Hydrogen-Monovacancy Defect in Silicon

Authors

Content

Title variants

Languages of publication

Abstracts

Keywords

Publisher

Journal

Year

Volume

Issue

Pages

Physical description

Dates

Contributors

References

Document Type

Publication order reference

Identifiers

YADDA identifier