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1997 | 92 | 5 | 989-992
Article title

Study of DI-Hydrogen-Monovacancy Defect in Silicon

Content
Title variants
Languages of publication
EN
Abstracts
EN
A careful analysis of the alleged electron paramagnetic resonance spectrum of VH_{2} in silicon is made. The parameters of this spectrum coincide with those of the well-known excited state (S=1) spectrum of the oxygen vacancy defect. The conclusion is reached that they are one and the same.
Keywords
EN
Publisher

Year
Volume
92
Issue
5
Pages
989-992
Physical description
Dates
published
1997-11
Contributors
author
  • Institut for Fysik og Astronomi, Århus University Ny Munkegade, bygning 520, 8000 Århus-C, Denmark
author
  • Institut for Fysik og Astronomi, Århus University Ny Munkegade, bygning 520, 8000 Århus-C, Denmark
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z530kz
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