First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

• Authors: T. Słupiński , E. Zielińska-Rohozińska
• Languages of publication: EN

Abstracts

EN

Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related lattice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.

Keywords

EN

61.72.-y; 71.55.-i; 61.10.-i

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 971-975

Dates

published

1997-11

Contributors

author

T. Słupiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

E. Zielińska-Rohozińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland