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1997 | 92 | 5 | 971-975
Article title

First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

Content
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Languages of publication
EN
Abstracts
EN
Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related lattice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.
Keywords
EN
Year
Volume
92
Issue
5
Pages
971-975
Physical description
Dates
published
1997-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z526kz
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