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1997 | 92 | 5 | 967-970
Article title

Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE

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EN
Abstracts
EN
We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF_{2}(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10^{19} cm^{-3} to 10^{2 1} cm^{-3} depending on the MBE process parameters.
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EN
Publisher

Year
Volume
92
Issue
5
Pages
967-970
Physical description
Dates
published
1997-11
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
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bwmeta1.element.bwnjournal-article-appv92z525kz
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