PL EN


Preferences help
enabled [disable] Abstract
Number of results
1997 | 92 | 5 | 963-966
Article title

Effect of Nonequilibrium Plasmons on Electron-Plasmon Interactions in Semiconductors

Content
Title variants
Languages of publication
EN
Abstracts
EN
The effect of nonequilibrium plasmons on the steady-state high-dc-field response of electron gas in n-GaAs is numerically studied via iterative procedure using the Monte Carlo simulation algorithm for hot-electron transport and the Boltzmann equation for plasmons. The electron population inversion in wave vector space along the electric field is predicted to exist for fields in excess of about 10 kVcm. The plasmon distribution disturbances leave the steady-state velocity at low fields almost unaffected but lead to reduction of that up to 10% for fields around and above the maximum of the velocity-field characteristics.
Keywords
EN
Publisher

Year
Volume
92
Issue
5
Pages
963-966
Physical description
Dates
published
1997-11
Contributors
author
  • Institute of RadioEngineering and Electronics of the Russian Academy of Sciences, Saratov Branch, Zelyonaya 38, Saratov 410019, Russia
author
  • Institute of RadioEngineering and Electronics of the Russian Academy of Sciences, Saratov Branch, Zelyonaya 38, Saratov 410019, Russia
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z524kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.