Effect of Nonequilibrium Plasmons on Electron-Plasmon Interactions in Semiconductors

• Authors: V.V. Popov , T Yu Bagaeva
• Languages of publication: EN

Abstracts

EN

The effect of nonequilibrium plasmons on the steady-state high-dc-field response of electron gas in n-GaAs is numerically studied via iterative procedure using the Monte Carlo simulation algorithm for hot-electron transport and the Boltzmann equation for plasmons. The electron population inversion in wave vector space along the electric field is predicted to exist for fields in excess of about 10 kVcm. The plasmon distribution disturbances leave the steady-state velocity at low fields almost unaffected but lead to reduction of that up to 10% for fields around and above the maximum of the velocity-field characteristics.

Keywords

EN

71.45.Gm; 72.10.Di

• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 5
• Pages: 963-966

Dates

published

1997-11

Contributors

author

V.V. Popov

• Institute of RadioEngineering and Electronics of the Russian Academy of Sciences, Saratov Branch, Zelyonaya 38, Saratov 410019, Russia

author

T Yu Bagaeva

• Institute of RadioEngineering and Electronics of the Russian Academy of Sciences, Saratov Branch, Zelyonaya 38, Saratov 410019, Russia