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1997 | 92 | 5 | 958-962
Article title

High Resistivity GaN Single Crystalline Substrates

Content
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Languages of publication
EN
Abstracts
EN
High resistivity 10^{4}-10^{6} Ω cm (300 K) GaN single crystals were obtained by solution growth under high N_{2} pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.
Keywords
EN
Year
Volume
92
Issue
5
Pages
958-962
Physical description
Dates
published
1997-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z523kz
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